Trifluorosilyl radical

Formula: F₃Si
Molecular weight: 85.0807
IUPAC Standard InChI: InChI=1S/F3Si/c1-4(2)3
IUPAC Standard InChIKey: ATVLVRVBCRICNU-UHFFFAOYSA-N
CAS Registry Number: 14835-14-4
Chemical structure:
This structure is also available as a 2d Mol file or as a computed 3d SD file
The 3d structure may be viewed using Java or Javascript.
Permanent link for this species. Use this link for bookmarking this species for future reference.
Information on this page:
Other data available:
- Gas phase thermochemistry data
Data at other public NIST sites:
- Electron-Impact Ionization Cross Sections (on physics web site)
- Gas Phase Kinetics Database
Options:
- Switch to calorie-based units

Gas phase ion energetics data

Go To: Top, Vibrational and/or electronic energy levels, References, Notes

Data compiled as indicated in comments:
LL - Sharon G. Lias and Joel F. Liebman
B - John E. Bartmess

View reactions leading to F₃Si⁺ (ion structure unspecified)

Electron affinity determinations

EA (eV)	Method	Reference	Comment
2.41 ± 0.22	LPES	Kawamata, Neigishi, et al., 1996	Vertical Detachment Energy: 2.76±0.05 eV.; B
2.95 ± 0.10	PD	Richardson, Stephenson, et al., 1975	non-adiabatic; B
2.03811	EIAE	Franklin, Wang, et al., 1974	From SiF₄; B
2.03811	EIAE	Wang, Margrave, et al., 1973	From SiF₄; B
3.69996	EIAE	MacNeil and Thynne, 1970	From SiF₄; B
3.35205	SI	Page and Goode, 1969	The Magnetron method, lacking mass analysis, is not considered reliable.; B

Ionization energy determinations

IE (eV)	Method	Reference	Comment
9.99 ± 0.24	END	Weber and Armentrout, 1988	LL

Vibrational and/or electronic energy levels

Go To: Top, Gas phase ion energetics data, References, Notes

Data compiled by: Marilyn E. Jacox

State: ?

Med.	λ_min (nm)	λ_max (nm)	References


gas	290	340	Suto, Han, et al., 1989
			Biehl, Boyle, et al., 1997

State: ?

Med.	λ_min (nm)	λ_max (nm)	References


gas	350	800	Donnelly and Flamm, 1980
			Suto, Han, et al., 1989
			Vanhaelemeersch, Van Hoeymissen, et al., 1991
			Biehl, Boyle, et al., 1997

State: X

Vib. sym.	No.	Approximate type of mode	cm^-1		Med.	Method	References


a₁	1	SiF stretch	834.9		Ne	IR	Jacox, Irikura, et al., 1995
	1	SiF stretch	832	s	Ar	IR	Milligan, Jacox, et al., 1968
	2	Umbrella	406	s	Ar	IR	Milligan, Jacox, et al., 1968
e	3	SiF stretch	958.6		Ne	IR	Jacox, Irikura, et al., 1995
	3	SiF stretch	954	vs	Ar	IR	Milligan, Jacox, et al., 1968
	4	Deformation	290	w m	Ar	IR	Milligan, Jacox, et al., 1968

Additional references: Jacox, 1994, page 218; Jacox, 1998, page 262; Jacox, 2003, page 241; Wang, Krishnan, et al., 1973; Griffith and Mathews, 1997; Tanimoto and Saito, 1999

Notes

Weak

Medium

Strong

Very strong

References

Go To: Top, Gas phase ion energetics data, Vibrational and/or electronic energy levels, Notes

Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K., Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-), J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377 . [all data]

Richardson, Stephenson, et al., 1975
Richardson, J.H.; Stephenson, L.M.; Brauman, J.I., Photodetachment of electrons from trifluoromethyl and trifluorosilyl ions the electron affinities of CF₃ and SiF₃, Chem. Phys. Lett., 1975, 30, 17. [all data]

Franklin, Wang, et al., 1974
Franklin, J.L.; Wang, J.L.-F.; Bennett, S.L.; Harland, P.W.; Margrave, J.L., Studies of the energies of negative ions at high temperatures, Adv. Mass Spectrom., 1974, 6, 319. [all data]

Wang, Margrave, et al., 1973
Wang, J.L.-F.; Margrave, J.L.; Franklin, J.L., Interpretation of dissociative electron attachment processes for carbon and silicon tetrafluorides, J. Chem. Phys., 1973, 58, 5417. [all data]

MacNeil and Thynne, 1970
MacNeil, K.A.G.; Thynne, J.C.J., The Formation of Negative Ions by Electron Impact on Silicon Tetrafluoride and Carbon Tetrafluoride, Int. J. Mass Spectrom. Ion Phys., 1970, 3, 6, 455, https://doi.org/10.1016/0020-7381(70)80004-3 . [all data]

Page and Goode, 1969
Page, F.M.; Goode, G.C., Negative Ions and the Magnetron., Wiley, NY, 1969. [all data]

Weber and Armentrout, 1988
Weber, M.E.; Armentrout, P.B., Energetics and dynamics in the reaction of Si⁺ with SiF₄. Thermochemistry of SiF_x and SiF_x⁺ (x=1,2,3), J. Chem. Phys., 1988, 11, 6898. [all data]

Suto, Han, et al., 1989
Suto, M.; Han, J.C.; Lee, L.C.; Chuang, T.J., Emission spectra of SiF3, J. Chem. Phys., 1989, 90, 5, 2834, https://doi.org/10.1063/1.455935 . [all data]

Biehl, Boyle, et al., 1997
Biehl, H.; Boyle, K.J.; Seccombe, D.P.; Smith, D.M.; Tuckett, R.P.; Yoxall, K.R.; Baumgartel, H.; Jochims, H.W., Vacuum-UV fluorescence spectroscopy of SiF[sub 4] in the range 10--30 eV, J. Chem. Phys., 1997, 107, 3, 720, https://doi.org/10.1063/1.474437 . [all data]

Donnelly and Flamm, 1980
Donnelly, V.M.; Flamm, D.L., Studies of chemiluminescence accompanying fluorine atom etching of silicon, J. Appl. Phys., 1980, 51, 10, 5273, https://doi.org/10.1063/1.327282 . [all data]

Vanhaelemeersch, Van Hoeymissen, et al., 1991
Vanhaelemeersch, S.; Van Hoeymissen, J.; Vermeylen, D.; Peeters, J., SiF2 as a primary desorption product of Si etching by F atoms: Interpretation of laser-induced fluorescence spectra; rate constant of the gas phase SiF2+F reaction, J. Appl. Phys., 1991, 70, 7, 3892, https://doi.org/10.1063/1.349197 . [all data]

Jacox, Irikura, et al., 1995
Jacox, M.E.; Irikura, K.K.; Thompson, W.E., Matrix isolation study of the interaction of excited neon atoms with SiF4: Infrared spectra of SiF+3 and SiF-3, J. Chem. Phys., 1995, 103, 13, 5308, https://doi.org/10.1063/1.470726 . [all data]

Milligan, Jacox, et al., 1968
Milligan, D.E.; Jacox, M.E.; Guillory, W.A., Matrix-Isolation Study of the Vacuum-Ultraviolet Photolysis of Trifluorosilane. The Infrared Spectrum of the Free Radical SiF3, J. Chem. Phys., 1968, 49, 12, 5330, https://doi.org/10.1063/1.1670052 . [all data]

Jacox, 1994
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules, American Chemical Society, Washington, DC, 1994, 464. [all data]

Jacox, 1998
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement A, J. Phys. Chem. Ref. Data, 1998, 27, 2, 115-393, https://doi.org/10.1063/1.556017 . [all data]

Jacox, 2003
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement B, J. Phys. Chem. Ref. Data, 2003, 32, 1, 1-441, https://doi.org/10.1063/1.1497629 . [all data]

Wang, Krishnan, et al., 1973
Wang, J.L.-F.; Krishnan, C.N.; Margrave, J.L., Emission spectrum of SiF3, J. Mol. Spectrosc., 1973, 48, 2, 346, https://doi.org/10.1016/0022-2852(73)90199-9 . [all data]

Griffith and Mathews, 1997
Griffith, W.B., Jr.; Mathews, C.W., private communication., 1997, https://doi.org/10.1016/S1090-9516(97)90007-9 . [all data]

Tanimoto and Saito, 1999
Tanimoto, M.; Saito, S., Microwave spectroscopic study of the SiF[sub 3] radical: Spin-rotation interaction and molecular structure, J. Chem. Phys., 1999, 111, 20, 9242, https://doi.org/10.1063/1.479838 . [all data]

Notes

Go To: Top, Gas phase ion energetics data, Vibrational and/or electronic energy levels, References

Symbols used in this document:

EA Electron affinity
Data from NIST Standard Reference Database 69: NIST Chemistry WebBook
The National Institute of Standards and Technology (NIST) uses its best efforts to deliver a high quality copy of the Database and to verify that the data contained therein have been selected on the basis of sound scientific judgment. However, NIST makes no warranties to that effect, and NIST shall not be liable for any damage that may result from errors or omissions in the Database.
Customer support for NIST Standard Reference Data products.