Trifluorosilyl radical

Formula: F₃Si
Molecular weight: 85.0807
IUPAC Standard InChI: InChI=1S/F3Si/c1-4(2)3
IUPAC Standard InChIKey: ATVLVRVBCRICNU-UHFFFAOYSA-N
CAS Registry Number: 14835-14-4
Chemical structure:
This structure is also available as a 2d Mol file or as a computed 3d SD file
The 3d structure may be viewed using Java or Javascript.
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Information on this page:
Other data available:
- Gas phase thermochemistry data
Data at other public NIST sites:
- Electron-Impact Ionization Cross Sections (on physics web site)
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Gas phase ion energetics data

Go To: Top, Vibrational and/or electronic energy levels, References, Notes

Data compiled as indicated in comments:
LL - Sharon G. Lias and Joel F. Liebman
B - John E. Bartmess

View reactions leading to F₃Si⁺ (ion structure unspecified)

Electron affinity determinations

EA (eV)	Method	Reference	Comment
2.41 ± 0.22	LPES	Kawamata, Neigishi, et al., 1996	Vertical Detachment Energy: 2.76±0.05 eV.; B
2.95 ± 0.10	PD	Richardson, Stephenson, et al., 1975	non-adiabatic; B
2.03811	EIAE	Franklin, Wang, et al., 1974	From SiF₄; B
2.03811	EIAE	Wang, Margrave, et al., 1973	From SiF₄; B
3.69996	EIAE	MacNeil and Thynne, 1970	From SiF₄; B
3.35205	SI	Page and Goode, 1969	The Magnetron method, lacking mass analysis, is not considered reliable.; B

Ionization energy determinations

IE (eV)	Method	Reference	Comment
9.99 ± 0.24	END	Weber and Armentrout, 1988	LL

Vibrational and/or electronic energy levels

Go To: Top, Gas phase ion energetics data, References, Notes

Data compiled by: Marilyn E. Jacox

State: ?

Med.	λ_min (nm)	λ_max (nm)	References


gas	290	340	Suto, Han, et al., 1989
			Biehl, Boyle, et al., 1997

State: ?

Med.	λ_min (nm)	λ_max (nm)	References


gas	350	800	Donnelly and Flamm, 1980
			Suto, Han, et al., 1989
			Vanhaelemeersch, Van Hoeymissen, et al., 1991
			Biehl, Boyle, et al., 1997

State: X

Vib. sym.	No.	Approximate type of mode	cm^-1		Med.	Method	References


a₁	1	SiF stretch	834.9		Ne	IR	Jacox, Irikura, et al., 1995
	1	SiF stretch	832	s	Ar	IR	Milligan, Jacox, et al., 1968
	2	Umbrella	406	s	Ar	IR	Milligan, Jacox, et al., 1968
e	3	SiF stretch	958.6		Ne	IR	Jacox, Irikura, et al., 1995
	3	SiF stretch	954	vs	Ar	IR	Milligan, Jacox, et al., 1968
	4	Deformation	290	w m	Ar	IR	Milligan, Jacox, et al., 1968

Additional references: Jacox, 1994, page 218; Jacox, 1998, page 262; Jacox, 2003, page 241; Wang, Krishnan, et al., 1973; Griffith and Mathews, 1997; Tanimoto and Saito, 1999

Notes

Weak

Medium

Strong

Very strong

References

Go To: Top, Gas phase ion energetics data, Vibrational and/or electronic energy levels, Notes

Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K., Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-), J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377 . [all data]

Richardson, Stephenson, et al., 1975
Richardson, J.H.; Stephenson, L.M.; Brauman, J.I., Photodetachment of electrons from trifluoromethyl and trifluorosilyl ions the electron affinities of CF₃ and SiF₃, Chem. Phys. Lett., 1975, 30, 17. [all data]

Franklin, Wang, et al., 1974
Franklin, J.L.; Wang, J.L.-F.; Bennett, S.L.; Harland, P.W.; Margrave, J.L., Studies of the energies of negative ions at high temperatures, Adv. Mass Spectrom., 1974, 6, 319. [all data]

Wang, Margrave, et al., 1973
Wang, J.L.-F.; Margrave, J.L.; Franklin, J.L., Interpretation of dissociative electron attachment processes for carbon and silicon tetrafluorides, J. Chem. Phys., 1973, 58, 5417. [all data]

MacNeil and Thynne, 1970
MacNeil, K.A.G.; Thynne, J.C.J., The Formation of Negative Ions by Electron Impact on Silicon Tetrafluoride and Carbon Tetrafluoride, Int. J. Mass Spectrom. Ion Phys., 1970, 3, 6, 455, https://doi.org/10.1016/0020-7381(70)80004-3 . [all data]

Page and Goode, 1969
Page, F.M.; Goode, G.C., Negative Ions and the Magnetron., Wiley, NY, 1969. [all data]

Weber and Armentrout, 1988
Weber, M.E.; Armentrout, P.B., Energetics and dynamics in the reaction of Si⁺ with SiF₄. Thermochemistry of SiF_x and SiF_x⁺ (x=1,2,3), J. Chem. Phys., 1988, 11, 6898. [all data]

Suto, Han, et al., 1989
Suto, M.; Han, J.C.; Lee, L.C.; Chuang, T.J., Emission spectra of SiF3, J. Chem. Phys., 1989, 90, 5, 2834, https://doi.org/10.1063/1.455935 . [all data]

Biehl, Boyle, et al., 1997
Biehl, H.; Boyle, K.J.; Seccombe, D.P.; Smith, D.M.; Tuckett, R.P.; Yoxall, K.R.; Baumgartel, H.; Jochims, H.W., Vacuum-UV fluorescence spectroscopy of SiF[sub 4] in the range 10--30 eV, J. Chem. Phys., 1997, 107, 3, 720, https://doi.org/10.1063/1.474437 . [all data]

Donnelly and Flamm, 1980
Donnelly, V.M.; Flamm, D.L., Studies of chemiluminescence accompanying fluorine atom etching of silicon, J. Appl. Phys., 1980, 51, 10, 5273, https://doi.org/10.1063/1.327282 . [all data]

Vanhaelemeersch, Van Hoeymissen, et al., 1991
Vanhaelemeersch, S.; Van Hoeymissen, J.; Vermeylen, D.; Peeters, J., SiF2 as a primary desorption product of Si etching by F atoms: Interpretation of laser-induced fluorescence spectra; rate constant of the gas phase SiF2+F reaction, J. Appl. Phys., 1991, 70, 7, 3892, https://doi.org/10.1063/1.349197 . [all data]

Jacox, Irikura, et al., 1995
Jacox, M.E.; Irikura, K.K.; Thompson, W.E., Matrix isolation study of the interaction of excited neon atoms with SiF4: Infrared spectra of SiF+3 and SiF-3, J. Chem. Phys., 1995, 103, 13, 5308, https://doi.org/10.1063/1.470726 . [all data]

Milligan, Jacox, et al., 1968
Milligan, D.E.; Jacox, M.E.; Guillory, W.A., Matrix-Isolation Study of the Vacuum-Ultraviolet Photolysis of Trifluorosilane. The Infrared Spectrum of the Free Radical SiF3, J. Chem. Phys., 1968, 49, 12, 5330, https://doi.org/10.1063/1.1670052 . [all data]

Jacox, 1994
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules, American Chemical Society, Washington, DC, 1994, 464. [all data]

Jacox, 1998
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement A, J. Phys. Chem. Ref. Data, 1998, 27, 2, 115-393, https://doi.org/10.1063/1.556017 . [all data]

Jacox, 2003
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement B, J. Phys. Chem. Ref. Data, 2003, 32, 1, 1-441, https://doi.org/10.1063/1.1497629 . [all data]

Wang, Krishnan, et al., 1973
Wang, J.L.-F.; Krishnan, C.N.; Margrave, J.L., Emission spectrum of SiF3, J. Mol. Spectrosc., 1973, 48, 2, 346, https://doi.org/10.1016/0022-2852(73)90199-9 . [all data]

Griffith and Mathews, 1997
Griffith, W.B., Jr.; Mathews, C.W., private communication., 1997, https://doi.org/10.1016/S1090-9516(97)90007-9 . [all data]

Tanimoto and Saito, 1999
Tanimoto, M.; Saito, S., Microwave spectroscopic study of the SiF[sub 3] radical: Spin-rotation interaction and molecular structure, J. Chem. Phys., 1999, 111, 20, 9242, https://doi.org/10.1063/1.479838 . [all data]

Notes

Go To: Top, Gas phase ion energetics data, Vibrational and/or electronic energy levels, References

Symbols used in this document:

EA Electron affinity
Data from NIST Standard Reference Database 69: NIST Chemistry WebBook
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