Trifluorosilyl radical
- Formula: F3Si
- Molecular weight: 85.0807
- IUPAC Standard InChI: InChI=1S/F3Si/c1-4(2)3
- IUPAC Standard InChIKey: ATVLVRVBCRICNU-UHFFFAOYSA-N
- CAS Registry Number: 14835-14-4
- Chemical structure:
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Gas phase ion energetics data
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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.
Data compiled as indicated in comments:
LL - Sharon G. Lias and Joel F. Liebman
B - John E. Bartmess
View reactions leading to F3Si+ (ion structure unspecified)
Electron affinity determinations
| EA (eV) | Method | Reference | Comment |
|---|---|---|---|
| 2.41 ± 0.22 | LPES | Kawamata, Neigishi, et al., 1996 | Vertical Detachment Energy: 2.76±0.05 eV.; B |
| 2.95 ± 0.10 | PD | Richardson, Stephenson, et al., 1975 | non-adiabatic; B |
| 2.03811 | EIAE | Franklin, Wang, et al., 1974 | From SiF4; B |
| 2.03811 | EIAE | Wang, Margrave, et al., 1973 | From SiF4; B |
| 3.69996 | EIAE | MacNeil and Thynne, 1970 | From SiF4; B |
| 3.35205 | SI | Page and Goode, 1969 | The Magnetron method, lacking mass analysis, is not considered reliable.; B |
Ionization energy determinations
| IE (eV) | Method | Reference | Comment |
|---|---|---|---|
| 9.99 ± 0.24 | END | Weber and Armentrout, 1988 | LL |
References
Go To: Top, Gas phase ion energetics data, Notes
Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.
Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K.,
Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-),
J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377
. [all data]
Richardson, Stephenson, et al., 1975
Richardson, J.H.; Stephenson, L.M.; Brauman, J.I.,
Photodetachment of electrons from trifluoromethyl and trifluorosilyl ions the electron affinities of CF3 and SiF3,
Chem. Phys. Lett., 1975, 30, 17. [all data]
Franklin, Wang, et al., 1974
Franklin, J.L.; Wang, J.L.-F.; Bennett, S.L.; Harland, P.W.; Margrave, J.L.,
Studies of the energies of negative ions at high temperatures,
Adv. Mass Spectrom., 1974, 6, 319. [all data]
Wang, Margrave, et al., 1973
Wang, J.L.-F.; Margrave, J.L.; Franklin, J.L.,
Interpretation of dissociative electron attachment processes for carbon and silicon tetrafluorides,
J. Chem. Phys., 1973, 58, 5417. [all data]
MacNeil and Thynne, 1970
MacNeil, K.A.G.; Thynne, J.C.J.,
The Formation of Negative Ions by Electron Impact on Silicon Tetrafluoride and Carbon Tetrafluoride,
Int. J. Mass Spectrom. Ion Phys., 1970, 3, 6, 455, https://doi.org/10.1016/0020-7381(70)80004-3
. [all data]
Page and Goode, 1969
Page, F.M.; Goode, G.C.,
Negative Ions and the Magnetron., Wiley, NY, 1969. [all data]
Weber and Armentrout, 1988
Weber, M.E.; Armentrout, P.B.,
Energetics and dynamics in the reaction of Si+ with SiF4. Thermochemistry of SiFx and SiFx+ (x=1,2,3),
J. Chem. Phys., 1988, 11, 6898. [all data]
Notes
Go To: Top, Gas phase ion energetics data, References
- Symbols used in this document:
EA Electron affinity - Data from NIST Standard Reference Database 69: NIST Chemistry WebBook
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