Si6

Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
2.390 ± 0.010N/APeppernick, Gunaratne, et al., 2010Stated electron affinity is the Vertical Detachment Energy
2.000 ± 0.020LPESKishi, Kawamata, et al., 1997Vertical Detachment Energy: 2.32±.03 eV
2.08 ± 0.14LPESKawamata, Neigishi, et al., 1996Vertical Detachment Energy: 2.40±0.05 eV.
1.73 ± 0.15LPESNakajima, Taguwa, et al., 1995Vertical Detachment Energy: 2.23±0.08 eV.
1.80 ± 0.20LPESCheshnovsky, Yang, et al., 1987EA given is Vertical Detachment Energy. Adiabatic EA est as up to 1 eV smaller
<3.70 ± 0.55IMRBMandich, Bondybey, et al., 1987The values from this reference are ca. 0.4-0.8 eV more bound than from other references
<2.33997LPDLiu, Zhang, et al., 1986EA given is Vertical Detachment Energy. Thought to be considerably greater than adiabatic.

Vibrational and/or electronic energy levels

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: Marilyn E. Jacox

State:   A
 Energy 
 (cm-1) 		  Med.   Transition   λmin 
 (nm) 		  λmax 
 (nm) 		  References
To = 6450 T gas Xu, Taylor, et al., 1998
Vib. 
sym. 		  No.   Approximate 
 type of mode 		  cm-1   Med.   Method   References
323 ± 20 gas PE Xu, Taylor, et al., 1998

State:   X

Vib. 
sym. 		  No.   Approximate 
 type of mode 		  cm-1   Med.   Method   References
a1g 458 N2 Ra Honea, Ogura, et al., 1993
300 N2 Ra Honea, Ogura, et al., 1993
b1g 386 N2 Ra Honea, Ogura, et al., 1993
b2g 252 N2 Ra Honea, Ogura, et al., 1993
eg 404 N2 Ra Honea, Ogura, et al., 1993
eu 462.9 Ne IR Li, Van Zee, et al., 1995
460.9 Ar IR Li, Van Zee, et al., 1995
458.5 Kr IR Li, Van Zee, et al., 1995

Additional references: Jacox, 1998, page 318; Jacox, 2003, page 326

Notes

TTentative assignment or approximate value
oEnergy separation between the v = 0 levels of the excited and electronic ground states.

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Peppernick, Gunaratne, et al., 2010
Peppernick, S.J.; Gunaratne, K.D.D.; Sayres, S.G.; Castleman, A.W., Photoelectron imaging of small silicon cluster anions, Si-n- (n=2-7), J. Chem. Phys., 2010, 132, 4, 044302, https://doi.org/10.1063/1.3299271 . [all data]

Kishi, Kawamata, et al., 1997
Kishi, R.; Kawamata, H.; Neigishi, Y.; Iwata, S.; Nakajima, A.; Kaya, K., Geometric and Electronic Structures of Silicon-Sodium Binary Clusters. II. Photoelectron Spectroscopy of SinNam Cluster Anions, J. Chem. Phys., 1997, 107, 23, 10029, https://doi.org/10.1063/1.474160 . [all data]

Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K., Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-), J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377 . [all data]

Nakajima, Taguwa, et al., 1995
Nakajima, A.; Taguwa, T.; Nakao, K.; Gomei, M.; Kishi, R.; Iwata, S.; Kaya, K., Photoelectron Spectroscopy of silicon-carbon cluster Anions (SinCm-), J. Chem. Phys., 1995, 103, 6, 2050, https://doi.org/10.1063/1.469731 . [all data]

Cheshnovsky, Yang, et al., 1987
Cheshnovsky, O.; Yang, S.H.; Pettiette, C.L.; Craycraft, M.J.; Liu, Y.; Smalley, R.E., Ultraviolet Photoelectron Spectroscopy of Semiconductor Clusters: Silicon and Germanium, Chem. Phys. Lett., 1987, 138, 2-3, 119, https://doi.org/10.1016/0009-2614(87)80353-6 . [all data]

Mandich, Bondybey, et al., 1987
Mandich, M.L.; Bondybey, V.E.; Reents, W.D., Reactive Etching of Positive and Negative Silicon Cluster Ions by Nitrogen Dioxide, J. Chem. Phys., 1987, 86, 7, 4245, https://doi.org/10.1063/1.451885 . [all data]

Liu, Zhang, et al., 1986
Liu, Y.; Zhang, Q.-L.; Tittel, F.K.; Curl, R.F.; Smalley, R.E., Photodetachment and Photofragmentation Studies of Semiconductor Cluster Anions, J. Chem. Phys., 1986, 85, 12, 7434, https://doi.org/10.1063/1.451332 . [all data]

Xu, Taylor, et al., 1998
Xu, C.; Taylor, T.R.; Burton, G.R.; Neumark, D.M., Vibrationally resolved photoelectron spectroscopy of silicon cluster anions Si[sub n][sup -] (n=3--7), J. Chem. Phys., 1998, 108, 4, 1395, https://doi.org/10.1063/1.475511 . [all data]

Honea, Ogura, et al., 1993
Honea, E.C.; Ogura, A.; Murray, C.A.; Raghavachari, K.; Sprenger, W.O.; Jarrold, M.F.; Brown, W.L., Raman spectra of size-selected silicon clusters and comparison with calculated structures, Nature, 1993, 366, 6450, 42, https://doi.org/10.1038/366042a0 . [all data]

Li, Van Zee, et al., 1995
Li, S.; Van Zee, R.J.; Weltner, W., Jr.; Raghavachari, K., Si3«58872»Si7. Experimental and theoretical infrared spectra, Chem. Phys. Lett., 1995, 243, 3-4, 275, https://doi.org/10.1016/0009-2614(95)00836-S . [all data]

Jacox, 1998
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement A, J. Phys. Chem. Ref. Data, 1998, 27, 2, 115-393, https://doi.org/10.1063/1.556017 . [all data]

Jacox, 2003
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement B, J. Phys. Chem. Ref. Data, 2003, 32, 1, 1-441, https://doi.org/10.1063/1.1497629 . [all data]

Notes

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