Si7

Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
2.390 ± 0.040N/APeppernick, Gunaratne, et al., 2010Stated electron affinity is the Vertical Detachment Energy
1.850 ± 0.020LPESXu, Taylor, et al., 1998 
1.650 ± 0.080LPESKawamata, Neigishi, et al., 1996Vertical Detachment Energy: 2.33±0.15 eV.
1.50 ± 0.10LPESNakajima, Taguwa, et al., 1995Vertical Detachment Energy: 2.25±0.08 eV.
1.65 ± 0.13LPESKishi, Kawamata, et al., 1997Vertical Detachment Energy: 2.34±.06 eV
1.70 ± 0.20LPESCheshnovsky, Yang, et al., 1987EA given is Vertical Detachment Energy. Adiabatic EA est as up to 1 eV smaller
<2.33997LPDLiu, Zhang, et al., 1986 

Vibrational and/or electronic energy levels

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: Marilyn E. Jacox

State:   A
 Energy 
 (cm-1) 		  Med.   Transition   λmin 
 (nm) 		  λmax 
 (nm) 		  References
To = 9200 ± 400 gas Xu, Taylor, et al., 1998, 2

State:   X

Vib. 
sym. 		  No.   Approximate 
 type of mode 		  cm-1   Med.   Method   References
a1' 435 N2 Ra Honea, Ogura, et al., 1993
2 385 ± 20 gas PE Ickingkonert, Handschuh, et al., 1996
Xu, Taylor, et al., 1998, 2
358 N2 Ra Honea, Ogura, et al., 1993
e1' 422.4 Ar IR Li, Van Zee, et al., 1995
420.4 Kr IR Li, Van Zee, et al., 1995
e2' 340 N2 Ra Honea, Ogura, et al., 1993
289 N2 Ra Honea, Ogura, et al., 1993

Additional references: Jacox, 1998, page 329; Jacox, 2003, page 344

Notes

oEnergy separation between the v = 0 levels of the excited and electronic ground states.

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Peppernick, Gunaratne, et al., 2010
Peppernick, S.J.; Gunaratne, K.D.D.; Sayres, S.G.; Castleman, A.W., Photoelectron imaging of small silicon cluster anions, Si-n- (n=2-7), J. Chem. Phys., 2010, 132, 4, 044302, https://doi.org/10.1063/1.3299271 . [all data]

Xu, Taylor, et al., 1998
Xu, C.S.; Taylor, T.R.; Burton, G.R.; Neumark, D.M., Vibrationally reserved photoelectron spectroscopy of silicon cluster anions Si-n(-) (n=3-7), J. Chem. Phys., 1998, 108, 4, 1395-1406, https://doi.org/10.1063/1.475511 . [all data]

Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K., Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-), J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377 . [all data]

Nakajima, Taguwa, et al., 1995
Nakajima, A.; Taguwa, T.; Nakao, K.; Gomei, M.; Kishi, R.; Iwata, S.; Kaya, K., Photoelectron Spectroscopy of silicon-carbon cluster Anions (SinCm-), J. Chem. Phys., 1995, 103, 6, 2050, https://doi.org/10.1063/1.469731 . [all data]

Kishi, Kawamata, et al., 1997
Kishi, R.; Kawamata, H.; Neigishi, Y.; Iwata, S.; Nakajima, A.; Kaya, K., Geometric and Electronic Structures of Silicon-Sodium Binary Clusters. II. Photoelectron Spectroscopy of SinNam Cluster Anions, J. Chem. Phys., 1997, 107, 23, 10029, https://doi.org/10.1063/1.474160 . [all data]

Cheshnovsky, Yang, et al., 1987
Cheshnovsky, O.; Yang, S.H.; Pettiette, C.L.; Craycraft, M.J.; Liu, Y.; Smalley, R.E., Ultraviolet Photoelectron Spectroscopy of Semiconductor Clusters: Silicon and Germanium, Chem. Phys. Lett., 1987, 138, 2-3, 119, https://doi.org/10.1016/0009-2614(87)80353-6 . [all data]

Liu, Zhang, et al., 1986
Liu, Y.; Zhang, Q.-L.; Tittel, F.K.; Curl, R.F.; Smalley, R.E., Photodetachment and Photofragmentation Studies of Semiconductor Cluster Anions, J. Chem. Phys., 1986, 85, 12, 7434, https://doi.org/10.1063/1.451332 . [all data]

Xu, Taylor, et al., 1998, 2
Xu, C.; Taylor, T.R.; Burton, G.R.; Neumark, D.M., Vibrationally resolved photoelectron spectroscopy of silicon cluster anions Si[sub n][sup -] (n=3--7), J. Chem. Phys., 1998, 108, 4, 1395, https://doi.org/10.1063/1.475511 . [all data]

Honea, Ogura, et al., 1993
Honea, E.C.; Ogura, A.; Murray, C.A.; Raghavachari, K.; Sprenger, W.O.; Jarrold, M.F.; Brown, W.L., Raman spectra of size-selected silicon clusters and comparison with calculated structures, Nature, 1993, 366, 6450, 42, https://doi.org/10.1038/366042a0 . [all data]

Ickingkonert, Handschuh, et al., 1996
Ickingkonert, G.S.; Handschuh, H.; Bechthold, P.S.; Gantefor, G.; Kessler, B.; Eberhardt, W., VIBRATIONALLY RESOLVED PHOTOELECTRON SPECTRA OF ANNEALED AND CLUSTERS, Surf. Rev. and Lett., 1996, 3, 01, 483, https://doi.org/10.1142/S0218625X96000875 . [all data]

Li, Van Zee, et al., 1995
Li, S.; Van Zee, R.J.; Weltner, W., Jr.; Raghavachari, K., Si3«58872»Si7. Experimental and theoretical infrared spectra, Chem. Phys. Lett., 1995, 243, 3-4, 275, https://doi.org/10.1016/0009-2614(95)00836-S . [all data]

Jacox, 1998
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement A, J. Phys. Chem. Ref. Data, 1998, 27, 2, 115-393, https://doi.org/10.1063/1.556017 . [all data]

Jacox, 2003
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement B, J. Phys. Chem. Ref. Data, 2003, 32, 1, 1-441, https://doi.org/10.1063/1.1497629 . [all data]

Notes

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