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Trisilicon carbide


Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled as indicated in comments:
RDSH - Henry M. Rosenstock, Keith Draxl, Bruce W. Steiner, and John T. Herron
B - John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
1.30 ± 0.10LPESNakajima, Taguwa, et al., 1995Vertical Detachment Energy: 1.54±0.08 eV; B
0.630 ± 0.040N/AMiller, Leopold, et al., 1986Extrapolated by polarizability and radius from experimental data.; B

Ionization energy determinations

IE (eV) Method Reference Comment
8.2 ± 0.3EIDrowart, DeMaria, et al., 1958RDSH

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Nakajima, Taguwa, et al., 1995
Nakajima, A.; Taguwa, T.; Nakao, K.; Gomei, M.; Kishi, R.; Iwata, S.; Kaya, K., Photoelectron Spectroscopy of silicon-carbon cluster Anions (SinCm-), J. Chem. Phys., 1995, 103, 6, 2050, https://doi.org/10.1063/1.469731 . [all data]

Miller, Leopold, et al., 1986
Miller, T.M.; Leopold, D.G.; Murray, K.K.; Lineberger, W.C., Electron Affinities of the Alkali Halides and the Structure of their Negative Ions, J. Chem. Phys., 1986, 85, 5, 2368, https://doi.org/10.1063/1.451091 . [all data]

Drowart, DeMaria, et al., 1958
Drowart, J.; DeMaria, G.; Inghram, M.G., Thermodynamic study of SiC utilizing a mass spectrometer, J. Chem. Phys., 1958, 29, 1015. [all data]


Notes

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