Trisilicon carbide

Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled as indicated in comments:
RDSH - Henry M. Rosenstock, Keith Draxl, Bruce W. Steiner, and John T. Herron
B - John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
1.30 ± 0.10LPESNakajima, Taguwa, et al., 1995Vertical Detachment Energy: 1.54±0.08 eV; B
0.630 ± 0.040N/AMiller, Leopold, et al., 1986Extrapolated by polarizability and radius from experimental data.; B

Ionization energy determinations

IE (eV) Method Reference Comment
8.2 ± 0.3EIDrowart, DeMaria, et al., 1958RDSH

Vibrational and/or electronic energy levels

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: Marilyn E. Jacox

State:   C
 Energy 
 (cm-1) 		  Med.   Transition   λmin 
 (nm) 		  λmax 
 (nm) 		  References
To = 24925 gas Stanton, Dudek, et al., 2005
Vib. 
sym. 		  No.   Approximate 
 type of mode 		  cm-1   Med.   Method   References
a1 2 Si3 s-deform. 530 ± 10 gas MPI Stanton, Dudek, et al., 2005
3 SiCSi s-deform. 300 ± 10 gas MPI Stanton, Dudek, et al., 2005

State:   X

Vib. 
sym. 		  No.   Approximate 
 type of mode 		  cm-1   Med.   Method   References
a1 1 Ring breathing 658.2 Ar IR Presilla-Marquez and Graham, 1992
2 Si3 s-deform. 505 ± 10 gas MPI Stanton, Dudek, et al., 2005
2 Si3 s-deform. 511.8 Ar IR Presilla-Marquez and Graham, 1992
3 SiCSi s-deform. 305 ± 10 gas MPI Stanton, Dudek, et al., 2005
3 SiCSi s-deform. 309.5 Ar IR Presilla-Marquez and Graham, 1992
b2 5 SiCSi a-stretch 1101.4 Ar IR Presilla-Marquez and Graham, 1992
6 Si3 a-stretch 357.6 Ar IR Presilla-Marquez and Graham, 1992

Additional references: Jacox, 1994, page 181

Notes

oEnergy separation between the v = 0 levels of the excited and electronic ground states.

References

Go To: Top, Gas phase ion energetics data, Vibrational and/or electronic energy levels, Notes

Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Nakajima, Taguwa, et al., 1995
Nakajima, A.; Taguwa, T.; Nakao, K.; Gomei, M.; Kishi, R.; Iwata, S.; Kaya, K., Photoelectron Spectroscopy of silicon-carbon cluster Anions (SinCm-), J. Chem. Phys., 1995, 103, 6, 2050, https://doi.org/10.1063/1.469731 . [all data]

Miller, Leopold, et al., 1986
Miller, T.M.; Leopold, D.G.; Murray, K.K.; Lineberger, W.C., Electron Affinities of the Alkali Halides and the Structure of their Negative Ions, J. Chem. Phys., 1986, 85, 5, 2368, https://doi.org/10.1063/1.451091 . [all data]

Drowart, DeMaria, et al., 1958
Drowart, J.; DeMaria, G.; Inghram, M.G., Thermodynamic study of SiC utilizing a mass spectrometer, J. Chem. Phys., 1958, 29, 1015. [all data]

Stanton, Dudek, et al., 2005
Stanton, J.F.; Dudek, J.; Theule, P.; Gupta, H.; McCarthy, M.C.; Thaddeus, P., Laser spectroscopy of Si[sub 3]C, J. Chem. Phys., 2005, 122, 12, 124314, https://doi.org/10.1063/1.1869981 . [all data]

Presilla-Marquez and Graham, 1992
Presilla-Marquez, J.D.; Graham, W.R.M., Vibrational spectra of tetra-atomic silicon--carbon clusters. I. Rhomboidal Si3C in Ar at 10 K, J. Chem. Phys., 1992, 96, 9, 6509, https://doi.org/10.1063/1.462588 . [all data]

Jacox, 1994
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules, American Chemical Society, Washington, DC, 1994, 464. [all data]

Notes

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