Trifluorosilyl radical

• Formula: F₃Si
• Molecular weight: 85.0807
• IUPAC Standard InChI: InChI=1S/F3Si/c1-4(2)3 Copy

  
• IUPAC Standard InChIKey: ATVLVRVBCRICNU-UHFFFAOYSA-N Copy
• CAS Registry Number: 14835-14-4
• Chemical structure:
  This structure is also available as a 2d Mol file or as a computed 3d SD file
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• Information on this page:
  • Gas phase thermochemistry data
  • Gas phase ion energetics data
  • Vibrational and/or electronic energy levels
  • References
  • Notes
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Gas phase thermochemistry data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Gas Phase Heat Capacity (Shomate Equation)

C_p° = A + B*t + C*t² + D*t³ + E/t²
H° − H°_298.15= A*t + B*t²/2 + C*t³/3 + D*t⁴/4 − E/t + F − H
S° = A*ln(t) + B*t + C*t²/2 + D*t³/3 − E/(2*t²) + G
    C_p = heat capacity (cal/mol*K)
    H° = standard enthalpy (kcal/mol)
    S° = standard entropy (cal/mol*K)
    t = temperature (K) / 1000.

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Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled as indicated in comments:
LL - Sharon G. Lias and Joel F. Liebman
B - John E. Bartmess

View reactions leading to F₃Si⁺ (ion structure unspecified)

Electron affinity determinations

Ionization energy determinations

Vibrational and/or electronic energy levels

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: Marilyn E. Jacox

State:   ?

State:   ?

State:   X

Additional references: Jacox, 1994, page 218; Jacox, 1998, page 262; Jacox, 2003, page 241; Wang, Krishnan, et al., 1973; Griffith and Mathews, 1997; Tanimoto and Saito, 1999

Notes

References

Go To: Top, Gas phase thermochemistry data, Gas phase ion energetics data, Vibrational and/or electronic energy levels, NIST Free Links, Notes

Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Chase, 1998
Chase, M.W., Jr., NIST-JANAF Themochemical Tables, Fourth Edition, J. Phys. Chem. Ref. Data, Monograph 9, 1998, 1-1951. [all data]

Kawamata, Neigishi, et al., 1996
Kawamata, H.; Neigishi, Y.; Kishi, R.; Iwata, S.; Nakajima, A.; Kaya, K., Photoelectron Spectroscopy of Silicon-Fluorine Binary Cluster Anions (SinFm-), J. Chem. Phys., 1996, 105, 13, 5369, https://doi.org/10.1063/1.472377 . [all data]

Richardson, Stephenson, et al., 1975
Richardson, J.H.; Stephenson, L.M.; Brauman, J.I., Photodetachment of electrons from trifluoromethyl and trifluorosilyl ions the electron affinities of CF₃ and SiF₃, Chem. Phys. Lett., 1975, 30, 17. [all data]

Franklin, Wang, et al., 1974
Franklin, J.L.; Wang, J.L.-F.; Bennett, S.L.; Harland, P.W.; Margrave, J.L., Studies of the energies of negative ions at high temperatures, Adv. Mass Spectrom., 1974, 6, 319. [all data]

Wang, Margrave, et al., 1973
Wang, J.L.-F.; Margrave, J.L.; Franklin, J.L., Interpretation of dissociative electron attachment processes for carbon and silicon tetrafluorides, J. Chem. Phys., 1973, 58, 5417. [all data]

MacNeil and Thynne, 1970
MacNeil, K.A.G.; Thynne, J.C.J., The Formation of Negative Ions by Electron Impact on Silicon Tetrafluoride and Carbon Tetrafluoride, Int. J. Mass Spectrom. Ion Phys., 1970, 3, 6, 455, https://doi.org/10.1016/0020-7381(70)80004-3 . [all data]

Page and Goode, 1969
Page, F.M.; Goode, G.C., Negative Ions and the Magnetron., Wiley, NY, 1969. [all data]

Weber and Armentrout, 1988
Weber, M.E.; Armentrout, P.B., Energetics and dynamics in the reaction of Si⁺ with SiF₄. Thermochemistry of SiF_x and SiF_x⁺ (x=1,2,3), J. Chem. Phys., 1988, 11, 6898. [all data]

Suto, Han, et al., 1989
Suto, M.; Han, J.C.; Lee, L.C.; Chuang, T.J., Emission spectra of SiF3, J. Chem. Phys., 1989, 90, 5, 2834, https://doi.org/10.1063/1.455935 . [all data]

Biehl, Boyle, et al., 1997
Biehl, H.; Boyle, K.J.; Seccombe, D.P.; Smith, D.M.; Tuckett, R.P.; Yoxall, K.R.; Baumgartel, H.; Jochims, H.W., Vacuum-UV fluorescence spectroscopy of SiF[sub 4] in the range 10--30 eV, J. Chem. Phys., 1997, 107, 3, 720, https://doi.org/10.1063/1.474437 . [all data]

Donnelly and Flamm, 1980
Donnelly, V.M.; Flamm, D.L., Studies of chemiluminescence accompanying fluorine atom etching of silicon, J. Appl. Phys., 1980, 51, 10, 5273, https://doi.org/10.1063/1.327282 . [all data]

Vanhaelemeersch, Van Hoeymissen, et al., 1991
Vanhaelemeersch, S.; Van Hoeymissen, J.; Vermeylen, D.; Peeters, J., SiF2 as a primary desorption product of Si etching by F atoms: Interpretation of laser-induced fluorescence spectra; rate constant of the gas phase SiF2+F reaction, J. Appl. Phys., 1991, 70, 7, 3892, https://doi.org/10.1063/1.349197 . [all data]

Jacox, Irikura, et al., 1995
Jacox, M.E.; Irikura, K.K.; Thompson, W.E., Matrix isolation study of the interaction of excited neon atoms with SiF4: Infrared spectra of SiF+3 and SiF-3, J. Chem. Phys., 1995, 103, 13, 5308, https://doi.org/10.1063/1.470726 . [all data]

Milligan, Jacox, et al., 1968
Milligan, D.E.; Jacox, M.E.; Guillory, W.A., Matrix-Isolation Study of the Vacuum-Ultraviolet Photolysis of Trifluorosilane. The Infrared Spectrum of the Free Radical SiF3, J. Chem. Phys., 1968, 49, 12, 5330, https://doi.org/10.1063/1.1670052 . [all data]

Jacox, 1994
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules, American Chemical Society, Washington, DC, 1994, 464. [all data]

Jacox, 1998
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement A, J. Phys. Chem. Ref. Data, 1998, 27, 2, 115-393, https://doi.org/10.1063/1.556017 . [all data]

Jacox, 2003
Jacox, M.E., Vibrational and electronic energy levels of polyatomic transient molecules: supplement B, J. Phys. Chem. Ref. Data, 2003, 32, 1, 1-441, https://doi.org/10.1063/1.1497629 . [all data]

Wang, Krishnan, et al., 1973
Wang, J.L.-F.; Krishnan, C.N.; Margrave, J.L., Emission spectrum of SiF3, J. Mol. Spectrosc., 1973, 48, 2, 346, https://doi.org/10.1016/0022-2852(73)90199-9 . [all data]

Griffith and Mathews, 1997
Griffith, W.B., Jr.; Mathews, C.W., private communication., 1997, https://doi.org/10.1016/S1090-9516(97)90007-9 . [all data]

Tanimoto and Saito, 1999
Tanimoto, M.; Saito, S., Microwave spectroscopic study of the SiF[sub 3] radical: Spin-rotation interaction and molecular structure, J. Chem. Phys., 1999, 111, 20, 9242, https://doi.org/10.1063/1.479838 . [all data]

Notes

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• Symbols used in this document:
  

  EA	Electron affinity
  S°gas,1 bar	Entropy of gas at standard conditions (1 bar)
  ΔfH°gas	Enthalpy of formation of gas at standard conditions

• Data from NIST Standard Reference Database 69: NIST Chemistry WebBook
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