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Silicon dimer


Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled as indicated in comments:
LL - Sharon G. Lias and Joel F. Liebman
LBLHLM - Sharon G. Lias, John E. Bartmess, Joel F. Liebman, John L. Holmes, Rhoda D. Levin, and W. Gary Mallard
RDSH - Henry M. Rosenstock, Keith Draxl, Bruce W. Steiner, and John T. Herron
B - John E. Bartmess

View reactions leading to Si2+ (ion structure unspecified)

Electron affinity determinations

EA (eV) Method Reference Comment
2.230 ± 0.010N/APeppernick, Gunaratne, et al., 2010Stated electron affinity is the Vertical Detachment Energy; B
2.202 ± 0.010LPESArnold, Kitsopoulos, et al., 1993B
2.199 ± 0.012LPESNimlos, Harding, et al., 1987B
<2.60011IMRBMandich, Bondybey, et al., 1987The values from this reference are ca. 0.4-0.8 eV more bound than from other references; B

Ionization energy determinations

IE (eV) Method Reference Comment
7.9LSWinstead, Paukstis, et al., 1995LL
<=8.04 ± 0.13DERBoo and Armentrout, 1987LBLHLM
7.3EIVerhaegen, Stafford, et al., 1964RDSH
7.4 ± 0.3EIDrowart, DeMaria, et al., 1958RDSH

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Peppernick, Gunaratne, et al., 2010
Peppernick, S.J.; Gunaratne, K.D.D.; Sayres, S.G.; Castleman, A.W., Photoelectron imaging of small silicon cluster anions, Si-n- (n=2-7), J. Chem. Phys., 2010, 132, 4, 044302, https://doi.org/10.1063/1.3299271 . [all data]

Arnold, Kitsopoulos, et al., 1993
Arnold, C.C.; Kitsopoulos, T.N.; Neumark, D.M., Reassignment of the Si2(-) Photodetachment Spectra, J. Chem. Phys., 1993, 99, 1, 766, https://doi.org/10.1063/1.465757 . [all data]

Nimlos, Harding, et al., 1987
Nimlos, M.R.; Harding, L.B.; Ellison, G.B., The Electronic States of Si2 and Si2- as Revealed by Photoelectron Spectroscopy, J. Chem. Phys., 1987, 87, 9, 5116, https://doi.org/10.1063/1.453679 . [all data]

Mandich, Bondybey, et al., 1987
Mandich, M.L.; Bondybey, V.E.; Reents, W.D., Reactive Etching of Positive and Negative Silicon Cluster Ions by Nitrogen Dioxide, J. Chem. Phys., 1987, 86, 7, 4245, https://doi.org/10.1063/1.451885 . [all data]

Winstead, Paukstis, et al., 1995
Winstead, C.B.; Paukstis, S.J.; Walters, J.L.; Gole, J.L., Multiphoton ionization of Ag2: Assessment of a new excited electronic state and resolution of the Ag2 ionization potential, J. Chem. Phys., 1995, 102, 1877. [all data]

Boo and Armentrout, 1987
Boo, B.H.; Armentrout, P.B., Reaction of silicon ion (2P) with silane (SiH4, SiD4) heats of formation of SiHn, SiHn+ (n=1,2,3), and Si2Hn+ (n=0,1,2,3) remarkable isotope exchange reaction involving four hydrogen shifts, J. Am. Chem. Soc., 1987, 109, 3549. [all data]

Verhaegen, Stafford, et al., 1964
Verhaegen, G.; Stafford, F.E.; Drowart, J., Mass spectrometric study of the systems boron-carbon and boron-carbon-silicon, J. Chem. Phys., 1964, 40, 1622. [all data]

Drowart, DeMaria, et al., 1958
Drowart, J.; DeMaria, G.; Inghram, M.G., Thermodynamic study of SiC utilizing a mass spectrometer, J. Chem. Phys., 1958, 29, 1015. [all data]


Notes

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