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Si12


Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled by: John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
2.60 ± 0.20LPESOhara, Koyasu, et al., 2003 
2.60 ± 0.20LPESCheshnovsky, Yang, et al., 1987EA given is Vertical Detachment Energy. Adiabatic EA est as up to 1 eV smaller
>2.99997LPDLiu, Zhang, et al., 1986EA given is Vertical Detachment Energy. Thought to be considerably greater than adiabatic.

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Ohara, Koyasu, et al., 2003
Ohara, M.; Koyasu, K.; Nakajima, A.; Kaya, K., Geometric and Electronic Structures of metal (M)-Doped Silicon Clusters (M=Ti, Hf, Mo, and W), Chem. Phys. Lett., 2003, 371, 3-4, 490-497., https://doi.org/10.1016/S0009-2614(03)00299-9 . [all data]

Cheshnovsky, Yang, et al., 1987
Cheshnovsky, O.; Yang, S.H.; Pettiette, C.L.; Craycraft, M.J.; Liu, Y.; Smalley, R.E., Ultraviolet Photoelectron Spectroscopy of Semiconductor Clusters: Silicon and Germanium, Chem. Phys. Lett., 1987, 138, 2-3, 119, https://doi.org/10.1016/0009-2614(87)80353-6 . [all data]

Liu, Zhang, et al., 1986
Liu, Y.; Zhang, Q.-L.; Tittel, F.K.; Curl, R.F.; Smalley, R.E., Photodetachment and Photofragmentation Studies of Semiconductor Cluster Anions, J. Chem. Phys., 1986, 85, 12, 7434, https://doi.org/10.1063/1.451332 . [all data]


Notes

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