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Gas phase ion energetics data

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Data compiled as indicated in comments:
RDSH - Henry M. Rosenstock, Keith Draxl, Bruce W. Steiner, and John T. Herron
B - John E. Bartmess

Electron affinity determinations

EA (eV) Method Reference Comment
2.400 ± 0.030N/APeppernick, Gunaratne, et al., 2010Stated electron affinity is the Vertical Detachment Energy; B
2.30177 ± 0.00087ZEKEArnold and Neumark, 1994B
2.33LPESKitsopoulos, Chick, et al., 1990B
2.00 ± 0.20LPESCheshnovsky, Yang, et al., 1987EA given is Vertical Detachment Energy. Adiabatic EA est as up to 1 eV smaller; B
<2.60011IMRBMandich, Bondybey, et al., 1987The values from this reference are ca. 0.4-0.8 eV more bound than from other references; B

Ionization energy determinations

IE (eV) Method Reference Comment
8.0 ± 0.3EIDrowart, DeMaria, et al., 1958RDSH

References

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Data compilation copyright by the U.S. Secretary of Commerce on behalf of the U.S.A. All rights reserved.

Peppernick, Gunaratne, et al., 2010
Peppernick, S.J.; Gunaratne, K.D.D.; Sayres, S.G.; Castleman, A.W., Photoelectron imaging of small silicon cluster anions, Si-n- (n=2-7), J. Chem. Phys., 2010, 132, 4, 044302, https://doi.org/10.1063/1.3299271 . [all data]

Arnold and Neumark, 1994
Arnold, C.C.; Neumark, D.M., Threshold Photodetachment Zero-Electron Kinetic Energy Spectroscopy of Si-3(-), J. Chem. Phys., 1994, 100, 3, 1797, https://doi.org/10.1063/1.466532 . [all data]

Kitsopoulos, Chick, et al., 1990
Kitsopoulos, T.N.; Chick, C.J.; Weaver, A.; Neumark, D.M., Vibrationally Resolved Photoelectron Spectra of Si-3- and Si-4-, J. Chem. Phys., 1990, 93, 8, 6108, https://doi.org/10.1063/1.459004 . [all data]

Cheshnovsky, Yang, et al., 1987
Cheshnovsky, O.; Yang, S.H.; Pettiette, C.L.; Craycraft, M.J.; Liu, Y.; Smalley, R.E., Ultraviolet Photoelectron Spectroscopy of Semiconductor Clusters: Silicon and Germanium, Chem. Phys. Lett., 1987, 138, 2-3, 119, https://doi.org/10.1016/0009-2614(87)80353-6 . [all data]

Mandich, Bondybey, et al., 1987
Mandich, M.L.; Bondybey, V.E.; Reents, W.D., Reactive Etching of Positive and Negative Silicon Cluster Ions by Nitrogen Dioxide, J. Chem. Phys., 1987, 86, 7, 4245, https://doi.org/10.1063/1.451885 . [all data]

Drowart, DeMaria, et al., 1958
Drowart, J.; DeMaria, G.; Inghram, M.G., Thermodynamic study of SiC utilizing a mass spectrometer, J. Chem. Phys., 1958, 29, 1015. [all data]


Notes

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